Friday, October 5, 2012

1210.1471 (M. Satta et al.)

Carbon Cations and Silicon Atoms in the ISM: modeling their charge exchange reaction    [PDF]

M. Satta, T. Grassi, F. A. Gianturco
The time-dependent rate coefficients for the charge exchange reaction $\mathrm{C}^+ + \mathrm{Si}\to\mathrm{C} + \mathrm{Si}^+$ for doublet and quartet states have been determined with \emph{ab initio} quantum calculations coupled with a non-adiabatic transition model based on a simple Landau-Zener picture. This reaction plays a key role in determining the abundances of C, Si, and their ions, in the ISM since these abundances affect the fine structure cooling and hence the star formation rates. We also provide additional calculations to evaluate the differences between the gas evolution as obtained by using the empirical rate estimates found in the current literature and the calculations presented in this work which are based on our more realistic evaluation of such rates from \emph{ab initio} transition probabilities . We shall thus show here that the new rates yield important differences for metal-rich environments where $T<10^4$ K and the UV flux is almost negligible, while becoming less important at higher T values and higher photon fluxes.
View original: http://arxiv.org/abs/1210.1471

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